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Abstract The tree shrew (Tupaia belangeri) is a promising emerging model organism in biomedical studies, notably due to their evolutionary proximity to primates. To enhance our understanding of how DNA methylation is implicated in regulation of gene expression and the X chromosome inactivation (XCI) in tree shrew brains, here we present their first genome-wide, single-base-resolution methylomes integrated with transcriptomes from prefrontal cortices. We discovered both divergent and conserved features of tree shrew DNA methylation compared to that of other mammals. DNA methylation levels of promoter and gene body regions are negatively correlated with gene expression, consistent with patterns in other mammalian brains studied. Comparing DNA methylation patterns of the female and male X chromosomes, we observed a clear and significant global reduction (hypomethylation) of DNA methylation across the entire X chromosome in females. Our data suggests that the female X hypomethylation does not directly contribute to the gene silencing of the inactivated X chromosome nor does it significantly drive sex-specific gene expression of tree shrews. However, we identified a putative regulatory region in the 5’ end of the X inactive specific transcript (Xist)gene, a key gene for XCI, whose pattern of differential DNA methylation strongly relate to its differential expression between male and female tree shrews. We show that differential methylation of this region is conserved across different species. Moreover, we provide evidence suggesting that the observed difference between human and tree shrew X-linked promoter methylation is associated with the difference in genomic CpG contents. Our study offers novel information on genomic DNA methylation of tree shrews, as well as insights into the evolution of X chromosome regulation in mammals. 

We report the synthesis of Ge1−ySny films containing 6%–13% Sn directly on Si(100) for monolithic integration applications, circumventing the use of conventional Ge-buffer layers. The films are produced in a gas source molecular epitaxy chamber at ultralow temperatures of 185–210 °C and a pressure of 10−5 Torr by the reactions of pure vapor Ge4H10 and SnD4 or SnH4 without carrier gases. Very small amounts of Si, incorporated via the Si4H10 precursor, can be used to improve the structural properties. All samples were characterized by XRD, RBS, IR-ellipsometry, AFM, and TEM, indicating the formation of monocrystalline single-phase films with relatively low defectivity and flat surfaces. A notable highlight is that the residual strains of the alloy layers are much lower compared to those grown on Ge buffers and can be further reduced by rapid thermal annealing without decomposition, indicating that growth on bare silicon should produce bulklike, high Sn content alloys that cannot be accessed using Ge buffers. N-type analogs of the above samples doped with phosphorus were also produced using P(SiH3)3 as the in situ dopant precursor. The results collectively illustrate the potential of our chemistry-based method to generate good quality Ge1−ySny layers directly on large area Si wafers bypassing Ge buffers that typically lead to complications such as multiple hetero-interfaces and epitaxial breakdown at high Sn concentrations.